IRL510 MOSFET
Specifications of IRL510 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±10 V
- Drain-Source On-State Resistance, max: 0 mΩ
- Continuous Drain Current: 5.6 A
- Total Gate Charge: 6.1 nC
- Power Dissipation: 43 W
- Package: TO-220AB