IRL640 MOSFET
Specifications of IRL640 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±10 V
- Drain-Source On-State Resistance, max: 0 mΩ
- Continuous Drain Current: 17 A
- Total Gate Charge: 66 nC
- Power Dissipation: 125 W
- Package: TO-220AB
Pinout of IRL640
