IRFSL38N20D MOSFET

Specifications of IRFSL38N20D MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 54 mΩ
  • Continuous Drain Current: 44 A
  • Total Gate Charge: 60 nC
  • Power Dissipation: 320 W
  • Package: TO-262

Pinout of IRFSL38N20D

IRFSL38N20D pinout

Replacement and Equivalent of IRFSL38N20D Transistor

You can replace the IRFSL38N20D with the IRFSL4227, IRFSL4229