IRFSL4229 MOSFET
Specifications of IRFSL4229 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 250 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 48 mΩ
- Continuous Drain Current: 45 A
- Total Gate Charge: 72 nC
- Power Dissipation: 330 W
- Package: TO-262
Pinout of IRFSL4229
