IRFS4510 MOSFET
Specifications of IRFS4510 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 13.9 mΩ
- Continuous Drain Current: 61 A
- Total Gate Charge: 58 nC
- Power Dissipation: 140 W
- Package: D2-PAK
Pinout of IRFS4510
![IRFS4510 pinout](/images/mosfet/irfs4510-pinout.jpg)