IRFR812 MOSFET

Specifications of IRFR812 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 500 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 999.999 mΩ
  • Continuous Drain Current: 3.6 A
  • Total Gate Charge: 13.3 nC
  • Power Dissipation: 78 W
  • Package: D-PAK

Pinout of IRFR812

IRFR812 pinout

Replacement and Equivalent of IRFR812 Transistor

You can replace the IRFR812 with the IRFR825