IRFR825 MOSFET
Specifications of IRFR825 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.3 mΩ
- Continuous Drain Current: 6 A
- Total Gate Charge: 22.7 nC
- Power Dissipation: 119 W
- Package: D-PAK
Pinout of IRFR825
