IRFR13N20D MOSFET

Specifications of IRFR13N20D MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 200 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 235 mΩ
  • Continuous Drain Current: 14 A
  • Total Gate Charge: 25 nC
  • Power Dissipation: 110 W
  • Package: D-PAK

Pinout of IRFR13N20D

IRFR13N20D pinout

Replacement and Equivalent of IRFR13N20D Transistor

You can replace the IRFR13N20D with the IRFR15N20D