IRFR15N20D MOSFET
Specifications of IRFR15N20D MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 165 mΩ
- Continuous Drain Current: 17 A
- Total Gate Charge: 27 nC
- Power Dissipation: 140 W
- Package: D-PAK
Pinout of IRFR15N20D
