IRFP260N MOSFET
Specifications of IRFP260N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 40 mΩ
- Continuous Drain Current: 49 A
- Total Gate Charge: 156 nC
- Power Dissipation: 300 W
- Package: TO-247AC