IRFP4668 MOSFET
Specifications of IRFP4668 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 9.7 mΩ
- Continuous Drain Current: 130 A
- Total Gate Charge: 161 nC
- Power Dissipation: 520 W
- Package: TO-247AC
Pinout of IRFP4668
