IRFI1010N MOSFET
Specifications of IRFI1010N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 12 mΩ
- Continuous Drain Current: 44 A
- Total Gate Charge: 86.7 nC
- Power Dissipation: 47 W
- Package: TO-220 FULLPAK (ISO)