IRFH8337 MOSFET

Specifications of IRFH8337 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 12.8 mΩ
  • Continuous Drain Current: 35 A
  • Total Gate Charge: 4.7 nC
  • Power Dissipation: 27 W
  • Package: PQFN 5 X 6 E

Pinout of IRFH8337

IRFH8337 pinout

Replacement and Equivalent of IRFH8337 Transistor

You can replace the IRFH8337 with the IRFH7107, IRFH8311, IRFH8318, IRFH8321, IRFH8324, IRFH8325, IRFH8330, IRFH8334