IRFH8311 MOSFET
Specifications of IRFH8311 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 2.1 mΩ
- Continuous Drain Current: 169 A
- Total Gate Charge: 30 nC
- Power Dissipation: 96 W
- Package: PQFN 5 X 6 E
Pinout of IRFH8311
