IRFH5210 MOSFET

Specifications of IRFH5210 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 14.9 mΩ
  • Continuous Drain Current: 55 A
  • Total Gate Charge: 39 nC
  • Power Dissipation: 104 W
  • Package: PQFN 5 X 6 B

Pinout of IRFH5210

IRFH5210 pinout

Replacement and Equivalent of IRFH5210 Transistor

You can replace the IRFH5210 with the IRFH5010, IRFH5110