IRFBC20 MOSFET
Specifications of IRFBC20 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 600 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 4.4 mΩ
- Continuous Drain Current: 2.2 A
- Total Gate Charge: 18 nC
- Power Dissipation: 50 W
- Package: TO-220AB