IRF8010S MOSFET

Specifications of IRF8010S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 15 mΩ
  • Continuous Drain Current: 80 A
  • Total Gate Charge: 81 nC
  • Power Dissipation: 260 W
  • Package: D2-PAK

Pinout of IRF8010S

IRF8010S pinout

Replacement and Equivalent of IRF8010S Transistor

You can replace the IRF8010S with the IRF3610S, IRFS4010, IRFS4115, IRFS4310, IRFS4321