IRF8010S MOSFET
Specifications of IRF8010S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 15 mΩ
- Continuous Drain Current: 80 A
- Total Gate Charge: 81 nC
- Power Dissipation: 260 W
- Package: D2-PAK
Pinout of IRF8010S
![IRF8010S pinout](/images/mosfet/irf8010s-pinout.jpg)