IRF7831 MOSFET

Specifications of IRF7831 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±12 V
  • Drain-Source On-State Resistance, max: 3.6 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 40 nC
  • Power Dissipation: 0 W
  • Package: SO-8

Pinout of IRF7831

IRF7831 pinout

Replacement and Equivalent of IRF7831 Transistor

You can replace the IRF7831 with the IRF7862, IRF8734, IRF8788