IRF8788 MOSFET
Specifications of IRF8788 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 2.8 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 44 nC
- Power Dissipation: 0 W
- Package: SO-8
Pinout of IRF8788
