IRF7807VD1 MOSFET
Specifications of IRF7807VD1 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 25 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 9.5 nC
- Power Dissipation: 0 W
- Package: SO-8
Pinout of IRF7807VD1
Replacement and Equivalent of IRF7807VD1 Transistor
You can replace the IRF7807VD1 with the
IRF7403,
IRF7413,
IRF7413Q,
IRF7413Z,
IRF7458,
IRF7469,
IRF7493,
IRF7495,
IRF7805Z,
IRF7805ZG,
IRF7807V,
IRF7807VD2,
IRF7807Z,
IRF7811AV,
IRF7821,
IRF7828,
IRF7832,
IRF7834,
IRF7842,
IRF7853,
IRF7854,
IRF7855,
IRF7862,
IRF8113,
IRF8113G,
IRF8707,
IRF8707G,
IRF8714,
IRF8714G,
IRF8721,
IRF8721G,
IRF8734,
IRF8736,
IRF8788,
SI4410DY,
SI4420DY