IRF6609 MOSFET

Specifications of IRF6609 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 20 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 2 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 46 nC
  • Power Dissipation: 89 W
  • Package: DIRECTFET MT

Pinout of IRF6609

IRF6609 pinout

Replacement and Equivalent of IRF6609 Transistor

You can replace the IRF6609 with the IRF6726M