IRF6726M MOSFET
Specifications of IRF6726M MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1.7 mΩ
- Continuous Drain Current: 180 A
- Total Gate Charge: 51 nC
- Power Dissipation: 89 W
- Package: DIRECTFET MT
Pinout of IRF6726M
