IRF6607 MOSFET

Specifications of IRF6607 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±12 V
  • Drain-Source On-State Resistance, max: 3.3 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 50 nC
  • Power Dissipation: 42 W
  • Package: DIRECTFET MT

Pinout of IRF6607

IRF6607 pinout

Replacement and Equivalent of IRF6607 Transistor

You can replace the IRF6607 with the IRF6618, IRF6726M