IRF5802 MOSFET

Specifications of IRF5802 MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 150 V
  • Gate-to-Source Voltage, max: ±30 V
  • Drain-Source On-State Resistance, max: 999.999 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 4.5 nC
  • Power Dissipation: 2 W
  • Package: TSOP-6 (MICRO 6)

Pinout of IRF5802

IRF5802 pinout

Replacement and Equivalent of IRF5802 Transistor

You can replace the IRF5802 with the IRF5801