IRF5801 MOSFET
Specifications of IRF5801 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 999.999 mΩ
- Continuous Drain Current: 0.6 A
- Total Gate Charge: 3.9 nC
- Power Dissipation: 2 W
- Package: TSOP-6 (MICRO 6)
Pinout of IRF5801
