IRF3415S MOSFET
Specifications of IRF3415S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 150 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 42 mΩ
- Continuous Drain Current: 43 A
- Total Gate Charge: 133.3 nC
- Power Dissipation: 3.8 W
- Package: D2-PAK