IRF1010N MOSFET

• Type: n-channel
• Drain-to-Source Breakdown Voltage: 55 V
• Gate-to-Source Voltage, max: ±20 V
• Drain-Source On-State Resistance, max: 11 mΩ
• Continuous Drain Current: 72 A
• Total Gate Charge: 80 nC
• Power Dissipation: 130 W
• Package: TO-220AB

You can replace the IRF1010N with the IRF1010EZ, IRF1010Z, IRF1405, IRF1405Z, IRF1407, IRF1607, IRF2805, IRF2807Z, IRF2907Z, IRF3205, IRF3205Z, IRF3305, IRF3805, IRF3808, IRFB3006, IRFB3006G, IRFB3077, IRFB3077G, IRFB3206, IRFB3206G, IRFB3207, IRFB3207Z, IRFB3207ZG, IRFB3256, IRFB3306, IRFB3306G, IRFB3307, IRFB3307Z, IRFB3307ZG, IRFB3607, IRFB3607G, IRFB4110, IRFB4110G, IRFB4115, IRFB4115G, IRFB4310, IRFB4310G, IRFB4310Z, IRFB4310ZG, IRFB4410, IRFB4410Z, IRFB4410ZG