IRF1010EZ MOSFET
Specifications of IRF1010EZ MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.5 mΩ
- Continuous Drain Current: 84 A
- Total Gate Charge: 58 nC
- Power Dissipation: 140 W
- Package: TO-220AB
Pinout of IRF1010EZ
Replacement and Equivalent of IRF1010EZ Transistor
You can replace the IRF1010EZ with the
IRF1407,
IRF1607,
IRF2907Z,
IRF3808,
IRFB3006,
IRFB3006G,
IRFB3077,
IRFB3077G,
IRFB3206,
IRFB3206G,
IRFB3207,
IRFB3207Z,
IRFB3207ZG,
IRFB3256,
IRFB3306,
IRFB3306G,
IRFB3307,
IRFB3307Z,
IRFB3307ZG,
IRFB4110,
IRFB4110G,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG
