SS8550B Bipolar Transistor

Characteristics of SS8550B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 85 to 160
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of SS8550B

The SS8550B is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The SS8550B transistor can have a current gain of 85 to 160. The gain of the SS8550 will be in the range from 85 to 300, for the SS8550C it will be in the range from 120 to 200, for the SS8550D it will be in the range from 160 to 300.

Complementary NPN transistor

The complementary NPN transistor to the SS8550B is the SS8050B.

SMD Version of SS8550B transistor

The MMBT3702 (SOT-23), MPS8550S (SOT-23) and MPS8550S-B (SOT-23) is the SMD version of the SS8550B transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for SS8550B transistor

You can replace the SS8550B with the MPS750, MPS750G, MPS8550 or MPS8550B.
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