PBHV8115Z Bipolar Transistor

Characteristics of PBHV8115Z Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.7 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-223

Pinout of PBHV8115Z

Here is an image showing the pin diagram of this transistor.

Marking

The PBHV8115Z transistor is marked as "V8115Z".

Complementary PNP transistor

The complementary PNP transistor to the PBHV8115Z is the PBHV9115Z.

Replacement and Equivalent for PBHV8115Z transistor

You can replace the PBHV8115Z with the PBHV8215Z.
If you find an error please send an email to mail@el-component.com