PBHV8115Z Bipolar Transistor
Characteristics of PBHV8115Z Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 400 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 0.7 W
- DC Current Gain (hfe): 100
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-223
Pinout of PBHV8115Z
Marking
Complementary PNP transistor
Replacement and Equivalent for PBHV8115Z transistor
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