PBHV8215Z Bipolar Transistor
Characteristics of PBHV8215Z Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 350 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 0.73 W
- DC Current Gain (hfe): 100
- Transition Frequency, min: 33 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-223
Pinout of PBHV8215Z
Marking
Complementary PNP transistor
If you find an error please send an email to mail@el-component.com