NTE159 Bipolar Transistor

Characteristics of NTE159 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 50 to 250
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 3 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of NTE159

The NTE159 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the NTE159 is the NTE123AP.

SMD Version of NTE159 transistor

The FMMTA56 (SOT-23), KST56 (SOT-23) and MMBT4356 (SOT-23) is the SMD version of the NTE159 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for NTE159 transistor

You can replace the NTE159 with the BC528, MPS4356, ZTX554 or ZTX555.
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