MMBT4356 Bipolar Transistor

Characteristics of MMBT4356 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 50 to 250
  • Noise Figure, max: 3 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular 2N4356 transistor

Pinout of MMBT4356

Here is an image showing the pin diagram of this transistor.

Marking

The MMBT4356 transistor is marked as "82".

Replacement and Equivalent for MMBT4356 transistor

You can replace the MMBT4356 with the FMMT555.
If you find an error please send an email to mail@el-component.com