MMBT4356 Bipolar Transistor
Characteristics of MMBT4356 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.8 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 50 to 250
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular 2N4356 transistor
Pinout of MMBT4356
Marking
Replacement and Equivalent for MMBT4356 transistor
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