NTE123A Bipolar Transistor
Characteristics of NTE123A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 75 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.8 A
- Collector Dissipation: 0.4 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 300 MHz
- Noise Figure, max: 4 dB
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-18
Pinout of NTE123A
Complementary PNP transistor
SMD Version of NTE123A transistor
Replacement and Equivalent for NTE123A transistor
If you find an error please send an email to mail@el-component.com