MMBT2222AT Bipolar Transistor
Characteristics of MMBT2222AT Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 75 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.6 A
- Collector Dissipation: 0.25 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 300 MHz
- Noise Figure, max: 4 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-523F
- Electrically Similar to the Popular 2N2222A transistor
Pinout of MMBT2222AT
Marking
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