MMBT2222AT Bipolar Transistor

Characteristics of MMBT2222AT Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 40 V
  • Collector-Base Voltage, max: 75 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 300 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-523F
  • Electrically Similar to the Popular 2N2222A transistor

Pinout of MMBT2222AT

Here is an image showing the pin diagram of this transistor.

Marking

The MMBT2222AT transistor is marked as "1P".
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