NJW3281G Bipolar Transistor
Characteristics of NJW3281G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 250 V
- Collector-Base Voltage, max: 250 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 15 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 75 to 150
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3P
- The NJW3281G is the lead-free version of the NJW3281 transistor
Pinout of NJW3281G
Complementary PNP transistor
Replacement and Equivalent for NJW3281G transistor
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