FMMT555 Bipolar Transistor
Characteristics of FMMT555 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -140 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 50 to 300
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular ZTX555 transistor
Pinout of FMMT555
Complementary NPN transistor
FMMT555 Transistor in TO-92 Package
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