MMBT3904WT1G Bipolar Transistor
Characteristics of MMBT3904WT1G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.2 A
- Collector Dissipation: 0.15 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 300 MHz
- Noise Figure, max: 5 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-323
- The MMBT3904WT1G is the lead-free version of the MMBT3904WT1 transistor
Pinout of MMBT3904WT1G
Marking
Replacement and Equivalent for MMBT3904WT1G transistor
If you find an error please send an email to mail@el-component.com