MJW21191G Bipolar Transistor

Characteristics of MJW21191G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 15 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • The MJW21191G is the lead-free version of the MJW21191 transistor

Pinout of MJW21191G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJW21191G is the MJW21192G.

Replacement and Equivalent for MJW21191G transistor

You can replace the MJW21191G with the MJW21191.
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