MJE4353G Bipolar Transistor
Characteristics of MJE4353G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -16 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 15 to 35
- Transition Frequency, min: 1 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-247
- The MJE4353G is the lead-free version of the MJE4353 transistor
Pinout of MJE4353G
Complementary NPN transistor
Replacement and Equivalent for MJE4353G transistor
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