MJE4343G Bipolar Transistor

Characteristics of MJE4343G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 15 to 35
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247
  • The MJE4343G is the lead-free version of the MJE4343 transistor

Pinout of MJE4343G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE4343G is the MJE4353G.

Replacement and Equivalent for MJE4343G transistor

You can replace the MJE4343G with the MJE4343.
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