MJE4341 Bipolar Transistor

Characteristics of MJE4341 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 16 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 15 to 35
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-247

Pinout of MJE4341

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE4341 is the MJE4351.

Replacement and Equivalent for MJE4341 transistor

You can replace the MJE4341 with the MJE4342, MJE4343 or MJE4343G.
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