MJE13002 Bipolar Transistor

Characteristics of MJE13002 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 600 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 8 to 40
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE13002

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13002 transistor

You can replace the MJE13002 with the MJE13003 or MJE13003G.
If you find an error please send an email to mail@el-component.com