MJE13003G Bipolar Transistor

Characteristics of MJE13003G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 8 to 40
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • The MJE13003G is the lead-free version of the MJE13003 transistor

Pinout of MJE13003G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE13003G transistor

You can replace the MJE13003G with the MJE13003.
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