MJD350T4G Bipolar Transistor

Characteristics of MJD350T4G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -3 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE350 transistor
  • The MJD350T4G is the lead-free version of the MJD350T4 transistor

Pinout of MJD350T4G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD350T4G transistor is marked as "J350G".

Replacement and Equivalent for MJD350T4G transistor

You can replace the MJD350T4G with the MJD350, MJD350G or MJD350T4.
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