MJD350T4G Bipolar Transistor
Characteristics of MJD350T4G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -300 V
- Collector-Base Voltage, max: -300 V
- Emitter-Base Voltage, max: -3 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 15 W
- DC Current Gain (hfe): 30 to 240
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-252
- Electrically Similar to the Popular MJE350 transistor
- The MJD350T4G is the lead-free version of the MJD350T4 transistor
Pinout of MJD350T4G
Marking
Replacement and Equivalent for MJD350T4G transistor
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