MJD350G Bipolar Transistor

Characteristics of MJD350G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -3 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-252
  • Electrically Similar to the Popular MJE350 transistor
  • The MJD350G is the lead-free version of the MJD350 transistor

Pinout of MJD350G

Here is an image showing the pin diagram of this transistor.

Marking

The MJD350G transistor is marked as "J350G".

Replacement and Equivalent for MJD350G transistor

You can replace the MJD350G with the MJD350, MJD350T4 or MJD350T4G.
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