KTC2025D-Y Bipolar Transistor
Characteristics of KTC2025D-Y Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 120 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 8 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 130 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-252
Pinout of KTC2025D-Y
Classification of hFE
Complementary PNP transistor
SMD Version of KTC2025D-Y transistor
Replacement and Equivalent for KTC2025D-Y transistor
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