KTC2025D Bipolar Transistor

Characteristics of KTC2025D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 100 to 320
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-252

Pinout of KTC2025D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC2025D transistor can have a current gain of 100 to 320. The gain of the KTC2025D-GR will be in the range from 160 to 320, for the KTC2025D-Y it will be in the range from 100 to 200.

Complementary PNP transistor

The complementary PNP transistor to the KTC2025D is the KTA1045D.

SMD Version of KTC2025D transistor

The FMMT624 (SOT-23) and FMMT625 (SOT-23) is the SMD version of the KTC2025D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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