KTC2022L-GR Bipolar Transistor

Characteristics of KTC2022L-GR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 130 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-251

Pinout of KTC2022L-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC2022L-GR transistor can have a current gain of 120 to 240. The gain of the KTC2022L will be in the range from 70 to 240, for the KTC2022L-Y it will be in the range from 70 to 140.

SMD Version of KTC2022L-GR transistor

The BDP955 (SOT-223) is the SMD version of the KTC2022L-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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