KTC2020L-GR Bipolar Transistor

Characteristics of KTC2020L-GR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-251

Pinout of KTC2020L-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTC2020L-GR transistor can have a current gain of 150 to 300. The gain of the KTC2020L will be in the range from 100 to 300, for the KTC2020L-Y it will be in the range from 100 to 200.

SMD Version of KTC2020L-GR transistor

The BDP949 (SOT-223) and FZT692B (SOT-223) is the SMD version of the KTC2020L-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
If you find an error please send an email to mail@el-component.com